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SVD2N65DTR - 650V N-CHANNEL MOSFET

Download the SVD2N65DTR datasheet PDF. This datasheet also covers the SVD2N65M variant, as both devices belong to the same 650v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

structure VDMOS technology.

Key Features

  • TO-220-3L TO-220F-3L ∗ ∗ ∗ ∗ ∗ 2A, 650V,RDS(on)(typ. )=4.5Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVD2N65M-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVD2N65DTR
Manufacturer Silan Microelectronics
File Size 624.27 KB
Description 650V N-CHANNEL MOSFET
Datasheet download datasheet SVD2N65DTR Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
SVD2N65D 650V N-CHANNEL MOSFET
SVD2N65F 650V N-CHANNEL MOSFET
SVD2N65M 650V N-CHANNEL MOSFET
SVD2N65T 650V N-CHANNEL MOSFET
SVD2N60D 600V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SVD2N65M/F/T/D_Datasheet 2A, 650V N-Channel MOSFET DESCRIPTION SVD2N65M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM 2 structure VDMOS technology. The improved 1 3 TO-251-3L planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. 1. Gate 2. Drain 3. Source TO-252-2L FEATURES TO-220-3L TO-220F-3L ∗ ∗ ∗ ∗ ∗ 2A, 650V,RDS(on)(typ.)=4.