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SVD2N65M Datasheet 650v N-channel MOSFET

Manufacturer: Silan Microelectronics

Overview: SVD2N65M/F/T/D_Datasheet 2A, 650V N-Channel MOSFET.

General Description

SVD2N65M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM 2 structure VDMOS technology.

The improved 1 3 TO-251-3L planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.

Key Features

  • TO-220-3L TO-220F-3L ∗ ∗ ∗ ∗ ∗ 2A, 650V,RDS(on)(typ. )=4.5Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability.

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