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SVD2N65M - 650V N-CHANNEL MOSFET

General Description

structure VDMOS technology.

Key Features

  • TO-220-3L TO-220F-3L ∗ ∗ ∗ ∗ ∗ 2A, 650V,RDS(on)(typ. )=4.5Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability.

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Datasheet Details

Part number SVD2N65M
Manufacturer Silan Microelectronics
File Size 624.27 KB
Description 650V N-CHANNEL MOSFET
Datasheet download datasheet SVD2N65M Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
SVD2N65D 650V N-CHANNEL MOSFET
SVD2N65DTR 650V N-CHANNEL MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SVD2N65M/F/T/D_Datasheet 2A, 650V N-Channel MOSFET DESCRIPTION SVD2N65M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM 2 structure VDMOS technology. The improved 1 3 TO-251-3L planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. 1. Gate 2. Drain 3. Source TO-252-2L FEATURES TO-220-3L TO-220F-3L ∗ ∗ ∗ ∗ ∗ 2A, 650V,RDS(on)(typ.)=4.