SVD730D Datasheet | Silan Microelectronics

SVD730D/F/T_Datasheet 5.5A, 400V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD730D/F/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. Features ∗ 5.5A,400V,RDS(on)（typ）=0.9Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt...