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SVF10N65CF - 650V N-CHANNEL MOSFET

Description

SVF10N65CF/K/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Features

  • 2 1 3 1.Gate 2.Drain 3.Source 12 12 3 3 TO-220F-3L TO-262-3L.
  • 10A,650V,RDS(on)(typ. )=0.80@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 1 2 3 TO-220FJH-3L.

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Datasheet Details

Part number SVF10N65CF
Manufacturer Silan Microelectronics
File Size 318.22 KB
Description 650V N-CHANNEL MOSFET
Datasheet download datasheet SVF10N65CF Datasheet
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Silan Microelectronics SVF10N65CF/K/FJH_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65CF/K/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES 2 1 3 1.Gate 2.Drain 3.Source 12 12 3 3 TO-220F-3L TO-262-3L  10A,650V,RDS(on)(typ.)=0.
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