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SVF18N65T - 650V N-CHANNEL MOSFET

Download the SVF18N65T datasheet PDF (SVF18N65F included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 650v n-channel mosfet.

Description

SVF18N65F/T/PN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Features

  • 1 3 12 3 TO-220-3L 1.Gate 2.Drain 3.Source 12 3 TO-3P 12 3 TO-220F-3L.
  • 18A,650V,RDS(on)(typ. )=0.48@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVF18N65F-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVF18N65T
Manufacturer Silan Microelectronics
File Size 316.37 KB
Description 650V N-CHANNEL MOSFET
Datasheet download datasheet SVF18N65T Datasheet

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Full PDF Text Transcription

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Silan Microelectronics SVF18N65F/T/PN_Datasheet 18A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 SVF18N65F/T/PN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES 1 3 12 3 TO-220-3L 1.Gate 2.Drain 3.Source 12 3 TO-3P 12 3 TO-220F-3L  18A,650V,RDS(on)(typ.)=0.
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