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SVF7N65CFJ_Datasheet
7A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
0B
SVF7N65CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
1B
7A, 650V, RDS(on)(typ.)=1.1Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF7N65CFJ Datasheet
