SVF7N65F Overview
Description
SVF7N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- Example:T:TO-220;F:TO-220F
- Nominal Voltage,using 2 digits Example: 60 denotes 600V, 65 denotes 650V
- Special Features indication, May be omitted
- Example: E denotes embeded ESD structure
