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SVF7N65FQ - MOSFET

This page provides the datasheet information for the SVF7N65FQ, a member of the SVF7N65CF MOSFET family.

Datasheet Summary

Description

SVF7N65CF/D/MJ/K/S/FQ/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Features

  • 7A, 650V, RDS(on)(typ. )=1.1Ω@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability TO-220F-3L TO-252-2L 12 3 12 3 TO-220FQ-3L TO-220-3L.

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Datasheet preview – SVF7N65FQ

Datasheet Details

Part number SVF7N65FQ
Manufacturer Silan Microelectronics
File Size 468.45 KB
Description MOSFET
Datasheet download datasheet SVF7N65FQ Datasheet
Additional preview pages of the SVF7N65FQ datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVF7N65CF/D/MJ/K/S/FQ/T _Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65CF/D/MJ/K/S/FQ/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. 2 11 3 3 1.Gate 2.Drain 3.Source TO-263-2L 12 3 TO-251J-3L 12 3 TO-262-3L FEATURES  7A, 650V, RDS(on)(typ.)=1.
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