| Part Number | SVF7N65F Datasheet |
|---|---|
| Manufacturer | Silan Microelectronics |
| Overview | SVF7N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the imp. ∗ 7A,650V,RDS(on)(typ)=1.1 Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE Silan VDMOS Code of F-Cell process Nominal current,using 1 or 2 digits: Example:4 denotes 4A, 10 denotes 10A, 08 denotes 0.8A N denotes N Channel Package information. Exampl. |
SVF7N65F Datasheet and Specifications PDF
The SVF7N65F is a 650V N-CHANNEL MOSFET.
| Part Number | SVF7N65F Datasheet |
|---|---|
| Description | N-Channel 650V Power MOSFET |
| Manufacturer | VBsemi |
| Overview |
SVF7N65F-VB
SVF7N65F-VB Datasheet
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Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
0
VGS = 10.
* Low figure-of-merit (FOM) Ron x Qg * Low input capacitance (Ciss) * Reduced switching and conduction losses * Ultra low gate charge (Qg) * Avalanche energy rated (UIS) APPLICATIONS * Server and telecom power supplies * Switch mode power supplies (SMPS) * Power factor correction power supplies (PFC. |