Datasheet4U Logo Datasheet4U.com

SVF7N65RMJ - 650V N-CHANNEL MOSFET

Datasheet Summary

Description

SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Features

  • 2 1 13 3 TO-252-2L 1.Gate 2.Drain 3.Source 12 3 TO-220-3L 12 3 TO-251J-3L.
  • 7A, 650V, RDS(on)(typ. )=1.2@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 12 3 TO-220F-3L 1 2 3 TO-220FJH-3L.

📥 Download Datasheet

Datasheet preview – SVF7N65RMJ

Datasheet Details

Part number SVF7N65RMJ
Manufacturer Silan Microelectronics
File Size 377.81 KB
Description 650V N-CHANNEL MOSFET
Datasheet download datasheet SVF7N65RMJ Datasheet
Additional preview pages of the SVF7N65RMJ datasheet.

📁 Similar Datasheet

Other Datasheets by Silan Microelectronics

Full PDF Text Transcription

Click to expand full text
Silan Microelectronics SVF7N65RD(MJ)(FJH)(F)(T)_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES 2 1 13 3 TO-252-2L 1.Gate 2.Drain 3.Source 12 3 TO-220-3L 12 3 TO-251J-3L  7A, 650V, RDS(on)(typ.)=1.
Published: |