Download the SVF830D datasheet PDF.
This datasheet also covers the SVF830T variant, as both devices belong to the same 500v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
SVD830T/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology.
Note: The manufacturer provides a single datasheet file (SVF830T-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for SVF830D (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
SVF830D. For precise diagrams, and layout, please refer to the original PDF.
SVD830T/F/D_Datasheet 4.5A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD830T/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced usi...
View more extracted text
hancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES ∗ 4.5A,500V,RDS(on(typ)=1.3Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability ORDERING SPECIFICATIONS Part No.
SVF830D Datasheet
