SVF830MJ Overview
SVF830T/D/MJ/FJ/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in...
SVF830MJ Key Features
- 5A,500V, RDS(on)(typ.)=1.2@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability