SVF830MJ
Description
SVF830T/D/MJ/FJ/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.
Key Features
- 5A,500V, RDS(on)(typ.)=1.2@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
