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SVF8N60F - 600V N-CHANNEL MOSFET

This page provides the datasheet information for the SVF8N60F, a member of the SVF8N60T 600V N-CHANNEL MOSFET family.

Description

SVF8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Features

  • ∗ 8A,600V,RDS(on)(typ. )=0.96Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability.

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Datasheet Details

Part number SVF8N60F
Manufacturer Silan Microelectronics
File Size 429.07 KB
Description 600V N-CHANNEL MOSFET
Datasheet download datasheet SVF8N60F Datasheet
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SVF8N60T/F_Datasheet 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 8A,600V,RDS(on)(typ.)=0.96Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
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