SVF8N65F Datasheet | Silan Microelectronics

SVF8N65T/F_Datasheet 8A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N65T/F is a N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. Features ∗ ∗ ∗ ∗ ∗ 8A, 650V, RDS(on)( typ )= 1.2Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOME...