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SVF8N65F - 650V N-CHANNEL MOSFET

This page provides the datasheet information for the SVF8N65F, a member of the SVF8N65T 650V N-CHANNEL MOSFET family.

Description

SVF8N65T/F is a N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Features

  • ∗ ∗ ∗ ∗ ∗ 8A, 650V, RDS(on)( typ )= 1.2Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability.

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Datasheet preview – SVF8N65F

Datasheet Details

Part number SVF8N65F
Manufacturer Silan Microelectronics
File Size 348.88 KB
Description 650V N-CHANNEL MOSFET
Datasheet download datasheet SVF8N65F Datasheet
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Full PDF Text Transcription

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SVF8N65T/F_Datasheet 8A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N65T/F is a N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ ∗ ∗ ∗ ∗ 8A, 650V, RDS(on)( typ )= 1.2Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
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