SVGP20110NP7 Datasheet | Silan Microelectronics

Silan Microelectronics SVGP20110NT(S)(P7)_Datasheet 88A, 200V N-CHANNEL MOSFET DESCRIPTION SVGP20110NT(S)(P7) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. Features - 88A, 200V, RDS(on)(typ.)=9.6m@VGS=10V - Low gate charge - Low Crss - Fast switching - Extreme dv/dt rated - 100% avalanche tested - Pb-free lead plating - Ro HS pliant 3 1.Gate 2.Drain 3.Source TO-220-3L 1 3 TO-263-2L TO-247-3L KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max. ID Qg.typ. Ratings 200 2.0~4.0 10.7 88 64 Unit V V m A n C ORDERING INFORMATION Part No. SVGP20110NT SVGP20110NS SVGP20110NSTR SVGP20110NP7 Package...