SVGP02R58NL5 Datasheet | Silan Microelectronics

Silan Microelectronics SVGP02R58NL5_Datasheet 294A, 25V N-CHANNEL MOSFET DESCRIPTION SVGP02R58NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. Features - 294A, 25V, RDS(on)(typ.)=0.48m@VGS=10V - Low gate charge - Low Crss - Fast switching - Extreme dv/dt rated - 100% avalanche tested - Pb-free lead plating - Ro HS pliant S1 S2 S3 G4 8D 7D 6D 5D 8 7 6 5 65 87 4 23 1 1 32 4 PDFN-8-5X6X0.95-1.27 KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.typ Ratings 25 1.0~2.1 0.58 294 134 Unit V V m A n C ORDERING INFORMATION Part No....