SVGP069R5NSA Datasheet | Silan Microelectronics

Silan Microelectronics SVGP069R5NSA_Datasheet 14A, 60V N-CHANNEL MOSFET DESCRIPTION SVGP069R5NSA is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in Secondary synchronous rectifier, Power Management for Inverter Systems. Features - 14A, 60V, RDS(on)(typ.)=8m@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability 4. Gate 1、2、3. Source 5、6；7、8. Drain 12 3 SOP-8-225-1.27 NOMENCLATURE SVGPXXXRXNX Silan Low voltage SGT MOS products Process Version, P denotes PASSIVATION Package information. Example: SA:SOP-8-225-1.27 Channel polarity: N denotes N channel, P denotes P channel Nominal voltage, using 2 digits; Example: 04 denotes 40V, 10 denotes 100V Resistance: R75 denotes 0.7mΩ；7R5 denotes 7.5mΩ; 100 denotes 10mΩ; 101 denotes 100mΩ ORDERING INFORMATION Part No. SVGP069R5NSA SVGP069R5NSATR Package SOP-8-225-1.27 SOP-8-225-1.27 Marking P069R5...