SVGP066R1NL5 Description
SVGP066R1NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems.
SVGP066R1NL5 Key Features
- 71A, 60V, RDS(on)(typ.)=5.1m@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Extreme dv/dt rated