SVGP066R1NL5 Datasheet | Silan Microelectronics

Silan Microelectronics SVGP066R1NL5_Datasheet 71A, 60V N-CHANNEL MOSFET DESCRIPTION SVGP066R1NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. Features - 71A, 60V, RDS(on)(typ.)=5.1m@VGS=10V - Low gate charge - Low Crss - Fast switching - Extreme dv/dt rated S1 S2 S3 G4 8D 7D 6D 5D 8 7 6 5 6 7 8 1 2 3 4 4 3 2 1 PDFN-8-5X6X0.95-1.27 ORDERING INFORMATION Part No. SVGP066R1NL5TR Package PDFN-8-5X6X0.95-1.27 Marking P066R1NL5 Hazardous Substance Control Halogen free Packing Type...