SVGP101R5NL Datasheet | Silan Microelectronics

Silan Microelectronics SVGP101R5NL_Datasheet 320A, 100V N-CHANNEL MOSFET DESCRIPTION SVGP101R5NL is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. Tab pin1 Pin2-8 Pin1.Gate Tab2.Drain pin2-8.Source Tab Features - 320A, 100V, RDS(on)(typ.)=1.1m@VGS=10V - Low gate charge - Low Crss - Fast switching - Extreme dv/dt rated - 100% avalanche tested - Pb-free lead plating - Ro HS pliant 8 Tab 1 1 8 TOLL-8L KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.typ Ratings 100 2.2~3.8 1.5 320 238 Unit V V m A n C ORDERING INFORMATION Part No. SVGP101R5NLTR Package TOLL-8L Marking...