SVGP103R0NP7 Datasheet | Silan Microelectronics

Silan Microelectronics SVGP103R0NT(P7)_Datasheet 180A, 100V N-CHANNEL MOSFET DESCRIPTION SVGP103R0NT(P7) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. 1 3 1.Gate 2.Drain 3.Source Features - 180A, 100V, RDS(on)(typ.)=2.5m@VGS=10V - Low gate charge - Low Crss - Fast switching - Extreme dv/dt rated - 100% avalanche tested - Pb-free lead plating - Ro HS pliant TO-220-3L TO-247-3L Features Characteristics VDS VGS(th) RDS(on),max. ID Qg.typ. Ratings 100 2.2~3.8 3.0 180 145 Unit V V m A n C ORDERING INFORMATION Part No. SVGP103R0NT SVGP103R0NP7 Package TO-220-3L...