SVGP104R5NAT Datasheet | Silan Microelectronics

Silan Microelectronics SVGP104R5NAT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVGP104R5NAT(S) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. Features - 120A, 100V, RDS(on)(typ.)=3.6m@VGS=10V - Low gate charge - Low Crss - Fast switching - Extreme dv/dt rated - 100% avalanche tested - Pb-free lead plating - Ro HS pliant 1 3 1.Gate 2.Drain 3.Source 3 TO-220-3L TO-263-2L KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max. ID Qg.typ. Ratings 100 2.0~4.0 4.5 120 114 Unit V V m A n C ORDERING INFORMATION Part No. SVGP104R5NAT SVGP104R5NAS SVGP104R5NASTR Package TO-220-3L TO-263-2L...