SVGP104R1NL5 Datasheet | Silan Microelectronics

Silan Microelectronics SVGP104R1NL5_Datasheet 136A, 100V N-CHANNEL MOSFET DESCRIPTION SVGP104R1NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. S1 S2 S3 G4 8D 7D 6D 5D Features - 136A, 100V, RDS(on)(typ.)=3.4m@VGS=10V - Low gate charge - Low Crss - Fast switching - Extreme dv/dt rated - 100% avalanche tested - Pb-free lead plating - Ro HS pliant PDFN-8-5X6X0.95-1.27 KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max. ID Qg.typ. Ratings 100 2.3~3.9 4.0 136 63 Unit V V m A n C ORDERING INFORMATION Part No. SVGP104R1NL5TR Package PDFN-8-5X6X0.95-1.27 Marking P104R1NL5 Hazardous Substance Control Halogen...