SVGP104R5NT Datasheet | Silan Microelectronics

Silan Microelectronics SVGP104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVGP104R5NT(S) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Management for Inverter Systems. Features - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability 1 3 1.Gate 2.Drain 3.Source TO-220-3L 1 3 TO-263-2L ORDERING INFORMATION Part No. SVGP104R5NT SVGP104R5NS SVGP104R5NSTR Package TO-220-3L TO-263-2L TO-263-2L Marking P104R5NT P104R5NS P104R5NS Hazardous Substance Control Pb free Halogen free Halogen free Packing Type Tube Tube Tape&Reel HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Rev.:1.1 Page 1 of 8 Silan Microelectronics SVGP104R5NT(S)_Datasheet...