SVGP082R6NL5A Datasheet | Silan Microelectronics

Silan Microelectronics SVGP082R6NL5A_Datasheet 100A, 80V N-CHANNEL MOSFET DESCRIPTION SVGP082R6NL5A is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. Features - 100A, 80V, RDS(on)(typ.)=2.2m@VGS=10V - Low gate charge - Low Crss - Fast switching - Extreme dv/dt rated - 100% avalanche tested - Pb-free lead plating - Ro HS pliant S1 S2 S3 G4 8D 7D 6D 5D 5 678 8 7 65 1 234 4 3 21 DFN-8-5×6×0.9-1.27 KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max. ID Qg.typ. Ratings 80 2.2~3.8 2.6 100 95 Unit V V m A n C ORDERING INFORMATION Part No. SVGP082R6NL5ATR Package DFN-8-5X6X0.9-1.27...