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SVS20N60KD2 - 600V SUPER JUNCTION MOS POWER TRANSISTOR

Download the SVS20N60KD2 datasheet PDF. This datasheet also covers the SVS20N60FJD2-SilanMicroelectronics variant, as both devices belong to the same 600v super junction mos power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

SVS20N60FJ(K)(T)(PN)(S)(P7)(F)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Key Features

  • 20A, 600V, RDS(on)(typ. )=0.16@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability 12 3 TO-220FJ-3L 1 2 3 TO-3P.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVS20N60FJD2-SilanMicroelectronics_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVS20N60KD2
Manufacturer Silan Microelectronics
File Size 474.58 KB
Description 600V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet SVS20N60KD2 Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
SVS20N60FD2 600V SUPER JUNCTION MOS POWER TRANSISTOR
SVS20N60FJD2 600V SUPER JUNCTION MOS POWER TRANSISTOR
SVS20N60P7D2 600V SUPER JUNCTION MOS POWER TRANSISTOR
SVS20N60PND2 600V SUPER JUNCTION MOS POWER TRANSISTOR
SVS20N60SD2 600V SUPER JUNCTION MOS POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVS20N60FJ(K)(T)(PN)(S)(P7)(F)D2_Datasheet 20A, 600V SUPER JUNCTION MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS20N60FJ(K)(T)(PN)(S)(P7)(F)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example. it is suitable for hard and soft switching topologies. 2 1 23 1 TO-262-3L 12 3 TO-220F-3L 3 1.Gate 2.Drain 3.Source 1 3 TO-263-2L 1 2 3 TO-247-3L 1 23 TO-220-3L FEATURES  20A, 600V, RDS(on)(typ.)=0.