SVS20N60SD2 Datasheet | Silan Microelectronics

Silan Microelectronics SVS20N60FJ(K)(T)(PN)(S)(P7)(F)D2_Datasheet 20A, 600V SUPER JUNCTION MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS20N60FJ(K)(T)(PN)(S)(P7)(F)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example. it is suitable for hard and soft switching topologies. 1 23 TO-262-3L 3 TO-220F-3L 3 1.Gate 2.Drain 3.Source TO-263-2L 1 2 3 TO-247-3L 1 23 TO-220-3L Features - 20A, 600V, RDS(on)(typ.)=0.16@VGS=10V - New revolutionary high voltage technology - Ultra low gate charge - Periodic avalanche rated - Extreme dv/dt rated - High peak current capability 12 3 TO-220FJ-3L 1 2 3 TO-3P ORDERING INFORMATION Part No. SVS20N60FJD2 SVS20N60KD2 SVS20N60TD2 SVS20N60PND2 SVS20N60SD2 SVS20N60SD2TR SVS20N60P7D2 SVS20N60FD2 Package TO-220FJ-3L TO-262-3L TO-220-3L TO-3P TO-263-2L TO-263-2L TO-247-3L TO-220F-3L Marking 20N60FJD2 20N60KD2 20N60TD2 20N60PND2 20N60SD2 20N60SD2 20N60P7D2 20N60FD2 Hazardous Substance Control Halogen free Halogen free Halogen free Pb free Halogen free Halogen free Pb free Halogen...