SVS20N60TD2 Description
SVS20N60FJ(K)(T)(PN)(S)(P7)(F)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.
SVS20N60TD2 Key Features
- 20A, 600V, RDS(on)(typ.)=0.16@VGS=10V
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- High peak current capability