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SVS20N60TD2 Datasheet 600V SUPER JUNCTION MOS POWER TRANSISTOR

Manufacturer: Silan Microelectronics

Download the SVS20N60TD2 datasheet PDF. This datasheet also includes the SVS20N60FJD2-SilanMicroelectronics variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (SVS20N60FJD2-SilanMicroelectronics_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVS20N60TD2
Manufacturer Silan Microelectronics
File Size 474.58 KB
Description 600V SUPER JUNCTION MOS POWER TRANSISTOR
Download SVS20N60TD2 Download (PDF)

General Description

SVS20N60FJ(K)(T)(PN)(S)(P7)(F)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.

Overview

Silan Microelectronics SVS20N60FJ(K)(T)(PN)(S)(P7)(F)D2_Datasheet 20A, 600V SUPER JUNCTION MOS POWER TRANSISTOR.

Key Features

  • 20A, 600V, RDS(on)(typ. )=0.16@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability 12 3 TO-220FJ-3L 1 2 3 TO-3P.

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