Datasheet Details
| Part number | SVSP11N60DD2 |
|---|---|
| Manufacturer | Silan Microelectronics |
| File Size | 430.27 KB |
| Description | 600V SUPER JUNCTION MOS POWER TRANSISTOR |
| Datasheet |
 SVSP11N60DD2 Datasheet
|
|
|
General Description
SVSP11N60D/F/S/FJD/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.
It achieves low conduction loss and switching losses.
Key Features
- 11A,600V, RDS(on)(typ. )=0.3@VGS=10V.
- New revolutionary high voltage technology.
- Ultra low gate charge.
- Periodic avalanche rated.
- Extreme dv/dt rated.
- High peak current capability 2 1 1 3 TO-263-2L 3 1 1.Gate 2.Drain 3.Source 3 TO-252-2L 1 2 3 TO-220-3L 12 3 TO-262-3L 123 TO-220FJD-3L 12 3 TO-220F-3L.