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SVSP11N60DD2 - 600V SUPER JUNCTION MOS POWER TRANSISTOR

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Silan Microelectronics

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SVSP11N60DD2 600V SUPER JUNCTION MOS POWER TRANSISTOR by Silan Microelectronics - Datasheet Preview — Datasheet preview – SVSP11N60DD2

Datasheet Details

Part number	SVSP11N60DD2
Manufacturer	Silan Microelectronics
File Size	430.27 KB
Description	600V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet	SVSP11N60DD2 Datasheet
Additional preview pages of the SVSP11N60DD2 datasheet.

Product details

Description

SVSP11N60D/F/S/FJD/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

Features

11A,600V, RDS(on)(typ. )=0.3@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Periodic avalanche rated.
Extreme dv/dt rated.
High peak current capability 2 1 1 3 TO-263-2L 3 1 1.Gate 2.Drain 3.Source 3 TO-252-2L 1 2 3 TO-220-3L 12 3 TO-262-3L 123 TO-220FJD-3L 12 3 TO-220F-3L.

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Published: Mar 17, 2025 |