SVSP11N60SD2 Datasheet | Silan Microelectronics

Silan Microelectronics SVSP11N60D/F/S/FJD/T/KD2_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N60D/F/S/FJD/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. Features - 11A,600V, RDS(on)(typ.)=0.3@VGS=10V - New revolutionary high voltage technology - Ultra low gate charge - Periodic avalanche rated - Extreme dv/dt rated - High peak current capability TO-263-2L 1.Gate 2.Drain 3.Source TO-252-2L 1 2 3 TO-220-3L 12 3 TO-262-3L TO-220FJD-3L 12 3 TO-220F-3L ORDERING INFORMATION Part No. SVSP11N60DD2TR SVSP11N60FD2 SVSP11N60SD2 SVSP11N60SD2TR SVSP11N60FJDD2 SVSP11N60TD2 SVSP11N60KD2 Package TO-252-2L TO-220F-3L TO-263-2L TO-263-2L TO-220FJD-3L TO-220-3L TO-262-3L Marking P11N60D P11N60FD2 P11N60SD2 P11N60SD2 P11N60FJD P11N60TD2 P11N60KD2 Hazardous Substance Control Halogen free Halogen free Halogen free Halogen free Halogen free Halogen free Halogen free Packing Type Tape & Reel Tube Tube Tape & Reel Tube Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http:...