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SVSP11N65FJHD2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

Download the SVSP11N65FJHD2 datasheet PDF. This datasheet also covers the SVSP11N65FJHD2-SilanMicroelectronics variant, as both devices belong to the same 650v super junction mos power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

SVSP11N65FJHD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Key Features

  • 11A, 650V, RDS(on)(typ. )=0.33@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability 1 2 3 TO-220FJH-3L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVSP11N65FJHD2-SilanMicroelectronics_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVSP11N65FJHD2
Manufacturer Silan Microelectronics
File Size 286.04 KB
Description 650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet SVSP11N65FJHD2 Datasheet

Other Datasheets by Silan Microelectronics

Part Number Description
SVSP11N65FJD 650V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP11N65F 650V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP11N65D 650V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP11N65K 650V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP11N65S 650V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP11N65TD2 650V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP11N60DD2 600V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP11N60FD2 600V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP11N60FJDD2 600V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP11N60KD2 600V SUPER JUNCTION MOS POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVSP11N65FJHD2_Datasheet 11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N65FJHD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 2 1 3 1.Gate 2.Drain 3.Source FEATURES  11A, 650V, RDS(on)(typ.)=0.33@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability 1 2 3 TO-220FJH-3L ORDERING INFORMATION Part No.