SVSP11N65FJHD2 Datasheet | Silan Microelectronics

Silan Microelectronics SVSP11N65FJHD2_Datasheet 11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N65FJHD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 1 3 1.Gate 2.Drain 3.Source Features - 11A, 650V, RDS(on)(typ.)=0.33@VGS=10V - New revolutionary high voltage technology - Ultra low gate charge - Periodic avalanche rated - Extreme dv/dt rated - High peak current capability 1 2 3 TO-220FJH-3L ORDERING INFORMATION Part No. SVSP11N65FJHD2 Package TO-220FJH-3L Marking P11N65FJH Hazardous Substance Control Halogen free Packing Type...