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SVSP11N65FJD - 650V SUPER JUNCTION MOS POWER TRANSISTOR

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Silan Microelectronics

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SVSP11N65FJD 650V SUPER JUNCTION MOS POWER TRANSISTOR by Silan Microelectronics - Datasheet Preview — Datasheet preview – SVSP11N65FJD

Datasheet Details

Part number	SVSP11N65FJD
Manufacturer	Silan Microelectronics
File Size	408.93 KB
Description	650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet	SVSP11N65FJD Datasheet
Note	This datasheet PDF includes multiple part numbers: SVSP11N65FJD, SVSP11N65D. Please refer to the document for exact specifications by model.
Additional preview pages of the SVSP11N65FJD datasheet.

Product details

Description

SVSP11N65D/F/S/FJD/K/TD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

Features

11A,650V, RDS(on)(typ. )=0.33@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Periodic avalanche rated.
Extreme dv/dt rated.
High peak current capability 12 3 TO-220F-3L 1 3 TO-252-2L.

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Other Datasheets by Silan Microelectronics

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Published: Jul 24, 2024 |