SVSP11N65TD2
DESCRIPTION
SVSP11N65D/F/S/FJD/K/TD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies.
TO-263-2L
3 1.Gate 2.Drain 3.Source
1 2
3 TO-220-3L
TO-220FJD-3L
3 TO-262-3L
FEATURES
- 11A,650V, RDS(on)(typ.)=0.33@VGS=10V
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- High peak current capability
12 3
TO-220F-3L
1 3
TO-252-2L
ORDERING INFORMATION
Part No. SVSP11N65DD2TR SVSP11N65FD2 SVSP11N65SD2 SVSP11N65SD2TR SVSP11N65FJDD2 SVSP11N65KD2 SVSP11N65TD2
Package TO-252-2L TO-220F-3L TO-263-2L TO-263-2L TO-220FJD-3L TO-262-3L TO-220-3L
Marking P11N65D P11N65FD2...
