SVSP60R070P7HD4 Datasheet | Silan Microelectronics

Silan Microelectronics SVSP60R070P7HD4_Datasheet 47A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP60R070P7HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 1 3 1.Gate 2.Drain 3.Source Features - 47A, 600V, RDS(on)(typ.)= 57mΩ@VGS=10V - New revolutionary high voltage technology - Ultra low gate charge - Periodic avalanche rated - Extreme dv/dt rated - High peak current capability - 100% avalanche tested - Pb-free lead plating - Ro HS pliant 123 TO-247-3L KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max. ID.pulse Qg.typ. Ratings 600 3.0~5.0 70 160 97 Unit V V m A n C ORDERING INFORMATION Part No. SVSP60R070P7HD4 Package TO-247-3L Marking P60R070HD4 Hazardous Substance...