SVSP60R070P7HD4 Datasheet 600V SUPER JUNCTION MOS POWER TRANSISTOR

Manufacturer: Silan Microelectronics

Download the SVSP60R070P7HD4 datasheet PDF. This datasheet also includes the SVSP60R070P7HD4-SilanMicroelectronics variant, as both parts are published together in a single manufacturer document.

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SVSP60R070P7HD4 600v super junction mos power transistor by Silan Microelectronics - Datasheet Preview — Note: The manufacturer provides a single datasheet file (SVSP60R070P7HD4-SilanMicroelectronics_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	SVSP60R070P7HD4
Manufacturer	Silan Microelectronics
File Size	511.28 KB
Description	600V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet	SVSP60R070P7HD4 Datasheet

General Description

SVSP60R070P7HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.

Overview

Silan Microelectronics SVSP60R070P7HD4_Datasheet 47A, 600V SUPER JUNCTION MOS POWER.

Key Features

47A, 600V, RDS(on)(typ. )= 57mΩ@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Periodic avalanche rated.
Extreme dv/dt rated.
High peak current capability.
100% avalanche tested.
Pb-free lead plating.
RoHS compliant 123 TO-247-3L KEY.

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