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SVSP60R090LHD4 Datasheet 600V SUPER JUNCTION MOS POWER TRANSISTOR

Manufacturer: Silan Microelectronics

Download the SVSP60R090LHD4 datasheet PDF. This datasheet also includes the SVSP60R090P7HD4-SilanMicroelectronics variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (SVSP60R090P7HD4-SilanMicroelectronics_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVSP60R090LHD4
Manufacturer Silan Microelectronics
File Size 625.28 KB
Description 600V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet SVSP60R090LHD4 Datasheet

General Description

SVSP60R090P7(L)(FJD)(T)(S)HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.

Overview

Silan Microelectronics SVSP60R090P7(L)(FJD)(T)(S)HD4_Datasheet 38A, 600V SUPER JUNCTION MOS POWER.

Key Features

  • 38A, 600V, RDS(on)(typ. )=75mΩ@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant KEY.

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