SVSP60R090THD4 Datasheet | Silan Microelectronics

Silan Microelectronics SVSP60R090P7(L)(FJD)(T)(S)HD4_Datasheet 38A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP60R090P7(L)(FJD)(T)(S)HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. Features - 38A, 600V, RDS(on)(typ.)=75mΩ@VGS=10V - New revolutionary high voltage technology - Ultra low gate charge - Periodic avalanche rated - Extreme dv/dt rated - High peak current capability - 100% avalanche tested - Pb-free lead plating - Ro HS pliant KEY PERFORMANCE PARAMETERS Characteristics VDS@TJ.max VGS(th) RDS(on),max. ID.pulse Qg.typ. Ratings 650 3.0~5.0 90 150 87 Unit V V m A n C Tab 1 pin1 3 1.Gate 2.Drain 3.Source Pin2-8 Pin1. Gate Tab. Drain pin2-8. Source 1 2 3 TO-247-3L 1 3 TO-263-2L TO-220FJD-3L Tab...