SVT068R5ND Description
SVT068R5NT/D/S/L5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. These devices are widely used in UPS, Power Management for Inverter Systems.
SVT068R5ND Key Features
- 80A, 60V, RDS(on)(typ.)=7.0m@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability