SVT3025D4 Datasheet | Silan Microelectronics

Silan Microelectronics SVT3025D4_Datasheet 30V N+P CHANNEL MOSFET DESCRIPTION SVT3025D4 is a N+P channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. These devices are widely used in UPS, Power Management for Inverter Systems. 1,4. Source 2, 5. Gate 3. Drain Features - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability - 100% avalanche tested - Pb-free lead plating - Ro HS pliant 3 1 2 45 TO-252-4L KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on)，max ID Qg.typ Ratings N-channel P-channel -30 1.0~2.5 -1.0~-2.5 -17 Unit V V m A n...