SVT03110PL3 - P-CHANNEL MOSFET

Silan Microelectronics

General Description

SVT03110PL3 is a P channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

Key Features

-46A, -30V, RDS(on)(typ. ) =7.0m@VGS=-10V.
Low gate charge.
Low Crss.
Fast switching.
Improved dv/dt capability.
100% avalanche tested.
Pb-free lead plating.
RoHS compliant S1 S2 S3 G4 8D 7D 6D 5D 8 7 6 5 65 7 8 1 2 3 4 4 3 2 1 PDFN-8-3.3×3.3×0.75-0.65 KEY.

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SVT03110PL3 p-channel mosfet by Silan Microelectronics - Datasheet Preview

Datasheet Details

Part number	SVT03110PL3
Manufacturer	Silan Microelectronics
File Size	329.12 KB
Description	P-CHANNEL MOSFET
Datasheet	SVT03110PL3 Datasheet

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Silan Microelectronics SVT03110PL3_Datasheet -46A, -30V P CHANNEL MOSFET DESCRIPTION SVT03110PL3 is a P channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in UPS, Power Management for Inverter Systems. FEATURES  -46A, -30V, RDS(on)(typ.) =7.0m@VGS=-10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability  100% avalanche tested  Pb-free lead plating  RoHS compliant S1 S2 S3 G4 8D 7D 6D 5D 8 7 6 5 65 7 8 1 2 3 4 4 3 2 1 PDFN-8-3.3×3.3×0.75-0.