SVT03380PSA - P-CHANNEL MOSFET

Silan Microelectronics

General Description

SVT03380PSA is a P channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

Key Features

-6.5A，-30V，RDS(on)(typ. ) =24m@VGS=-10V.
Low gate charge.
Low Crss.
Fast switching.
Improved dv/dt capability.
100% avalanche tested.
Pb-free lead plating.
RoHS compliant SOP-8-225-1.27 KEY.

📥 Download Datasheet

SVT03380PSA p-channel mosfet by Silan Microelectronics - Datasheet Preview

Datasheet Details

Part number	SVT03380PSA
Manufacturer	Silan Microelectronics
File Size	335.57 KB
Description	P-CHANNEL MOSFET
Datasheet	SVT03380PSA Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
SVT10100U	EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER	Pan Jit International
SVT10100UB	EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER	Pan Jit International
SVT10120V	ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER	Pan Jit International
SVT10120VB	ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER	Pan Jit International
SVT10150V	ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER	Pan Jit International

Other Datasheets by Silan Microelectronics

Part Number	Description
SVT033R5NAT	N-CHANNEL MOSFET
SVT033R5NT	N-CHANNEL MOSFET
SVT03100ND	30V N-CHANNEL MOSFET
SVT03100NL3	N-CHANNEL MOSFET
SVT03110PL3	P-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Silan Microelectronics SVT03380PSA_Datasheet -6.5A, -30V P CHANNEL MOSFET DESCRIPTION SVT03380PSA is a P channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. These devices are widely used in UPS, Power Management for Inverter Systems. 4. Gate 1, 2, 3. Source 5, 6; 7, 8. Drain 4 5678 12 3 FEATURES  -6.5A，-30V，RDS(on)(typ.) =24m@VGS=-10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability  100% avalanche tested  Pb-free lead plating  RoHS compliant SOP-8-225-1.