SVT033R5NAT Datasheet | Silan Microelectronics

Silan Microelectronics SVT033R5NAT_Datasheet 180A, 30V N-CHANNEL MOSFET DESCRIPTION The SVT033R5NAT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems. Features - 180A,30V,RDS(on)(typ.)=2.8m@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.Source 1 23 TO-220HW-3L ORDERING INFORMATION Part No. SVT033R5NAT Packa...