SVT033R5NAT Description
The SVT033R5NAT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems.
SVT033R5NAT Key Features
- 180A,30V,RDS(on)(typ.)=2.8m@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability