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SVT033R5NAT - N-CHANNEL MOSFET

General Description

The SVT033R5NAT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Key Features

  • 180A,30V,RDS(on)(typ. )=2.8m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.Source 1 23 TO-220HW-3L.

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Datasheet Details

Part number SVT033R5NAT
Manufacturer Silan Microelectronics
File Size 271.10 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet SVT033R5NAT Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silan Microelectronics SVT033R5NAT_Datasheet 180A, 30V N-CHANNEL MOSFET DESCRIPTION The SVT033R5NAT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems. FEATURES  180A,30V,RDS(on)(typ.)=2.8m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.Source 1 23 TO-220HW-3L ORDERING INFORMATION Part No.