SVTP209R7NP7 Datasheet | Silan Microelectronics

Silan Microelectronics SVTP209R7NP7_Datasheet 130A, 200V N-CHANNEL MOSFET DESCRIPTION SVTP209R7NP7 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power management for UPS and Inverter Systems. 1 3 1. Gate 2. Drain 3.Source Features - 130A, 200V, RDS(on)(typ.)=8.5m@VGS=10V - Low gate charge - Low Crss - Fast switching - Extreme dv/dt rated - 100% avalanche tested - Pb-free lead plating - Ro HS pliant 1 23 TO-247-3L KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.typ. Ratings 200 3.5~4.5 9.7 130 185 Unit V V m A n C ORDERING INFORMATION Part No. SVTP209R7NP7 Package TO-247-3L Marking P209R7NP7 Hazardous Substance...