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SCDP120R013N2P4B Datasheet 1200V SiC MOS POWER TRANSISTOR

Manufacturer: Silan Semiconductors

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Datasheet Details

Part number SCDP120R013N2P4B
Manufacturer Silan Semiconductors
File Size 705.11 KB
Description 1200V SiC MOS POWER TRANSISTOR
Datasheet download datasheet SCDP120R013N2P4B Datasheet

General Description

SCDP120R013N2P4B is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s Silicon Carbide technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.

Overview

Silan Microelectronics SCDP120R013N2P4B_Datasheet 13.5mΩ, 1200V SiC MOS POWER.

Key Features

  • 138A, 1200V, RDS(on)(typ. )= 13.5m@VGS=15V.
  • Silicon Carbide technology.
  • Low switching loss.
  • Low reverse recovery charge.
  • Reduced requirement for heat dissipation.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant 1 234 TO-247B-4L KEY.

More Datasheets from Silan Semiconductors

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SCDP120R040NP4B 1200V SiC MOS POWER TRANSISTOR