SCDP120R013N2P4B Datasheet | Silan Semiconductors

Silan Microelectronics SCDP120R013N2P4B_Datasheet 13.5mΩ, 1200V SiC MOS POWER TRANSISTOR DESCRIPTION SCDP120R013N2P4B is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s Silicon Carbide technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for switching power supplies, inverters, and DC-DC converters. 1. Drain 2. Power Source 3. Driver Source 4. Gate Features - 138A, 1200V, RDS(on)(typ.)= 13.5m@VGS=15V - Silicon Carbide technology - Low switching...