SGT75T65SDM1P4 - 650V FIELD STOP IGBT

Silan Semiconductors

General Description

SGT75T65SDM1P4 adopts Field Stop III IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application.

Key Features

75A, 650V, VCE(sat)(typ. )=1.65V@IC=75A.
Low conduction loss.
Fast switching.
High input impedance C 1 4 G 3 2 E TO-247-4L.

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SGT75T65SDM1P4 650v field stop igbt by Silan Semiconductors - Datasheet Preview

Datasheet Details

Part number	SGT75T65SDM1P4
Manufacturer	Silan Semiconductors
File Size	367.64 KB
Description	650V FIELD STOP IGBT
Datasheet	SGT75T65SDM1P4 Datasheet

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Full PDF Text Transcription (Reference)

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Silan Microelectronics SGT75T65SDM1P4_Datasheet 75A, 650V FIELD STOP IGBT DESCRIPTION SGT75T65SDM1P4 adopts Field Stop III IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application. FEATURES  75A, 650V, VCE(sat)(typ.)=1.65V@IC=75A  Low conduction loss  Fast switching  High input impedance C 1 4 G 3 2 E TO-247-4L NOMENCLATURE IGBT series Current, 70: 70A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V 120: 1200V SGT 75 T 65 S D M 1 P4 Package P7 : TO-247-3L F: TO-220F-3L 1,2,3… : Version No.