SGT75T65SDM1P7 - 650V FIELD STOP IGBT

Silan Semiconductors

General Description

SGT75T65SDM1P7 adopts Field Stop III IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application.

Key Features

75A, 650V, VCE(sat)(typ. )=1.65V@IC=75A.
Low conduction loss.
Fast switching.
High input impedance C 2 1 G 3 E 123 TO-247-3L.

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SGT75T65SDM1P7 650v field stop igbt by Silan Semiconductors - Datasheet Preview

Datasheet Details

Part number	SGT75T65SDM1P7
Manufacturer	Silan Semiconductors
File Size	441.42 KB
Description	650V FIELD STOP IGBT
Datasheet	SGT75T65SDM1P7 Datasheet

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Silan Microelectronics SGT75T65SDM1P7_Datasheet 75A, 650V FIELD STOP IGBT DESCRIPTION SGT75T65SDM1P7 adopts Field Stop III IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application. FEATURES  75A, 650V, VCE(sat)(typ.)=1.65V@IC=75A  Low conduction loss  Fast switching  High input impedance C 2 1 G 3 E 123 TO-247-3L NOMENCLATURE IGBT series Current, 70: 70A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V 120: 1200V SGT 75 T 65 S D M 1 P7 Package P7 : TO-247-3L 1,2,3… : Version No.