Datasheet4U Logo Datasheet4U.com

SVG032R4NL5 - 30V N-CHANNEL MOSFET

Download the SVG032R4NL5 datasheet PDF. This datasheet also covers the SVG032R4NL5-SilanSemiconductors variant, as both devices belong to the same 30v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SVG032R4NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

Key Features

  • 100A, 30V, RDS(on)(typ. )=2.0m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Extreme dv/dt rated.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant KEY.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVG032R4NL5-SilanSemiconductors_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVG032R4NL5
Manufacturer Silan Semiconductors
File Size 418.66 KB
Description 30V N-CHANNEL MOSFET
Datasheet download datasheet SVG032R4NL5 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVG032R4NL5_Datasheet 100A, 30V N-CHANNEL MOSFET DESCRIPTION SVG032R4NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power management for UPS and Inverter Systems. FEATURES  100A, 30V, RDS(on)(typ.)=2.0m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max. ID Qg.typ. Ratings 30 1.3~2.3 2.