SVG032R4NL5 Datasheet | Silan Semiconductors

Silan Microelectronics SVG032R4NL5_Datasheet 100A, 30V N-CHANNEL MOSFET DESCRIPTION SVG032R4NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power management for UPS and Inverter Systems. Features - 100A, 30V, RDS(on)(typ.)=2.0m@VGS=10V - Low gate charge - Low Crss - Fast switching - Extreme dv/dt rated - 100% avalanche tested - Pb-free lead plating - Ro HS pliant KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max. ID Qg.typ. Ratings 30 1.3~2.3 2.4 100 39 Unit V V m A n C ORDERING INFORMATION Part No. SVG032R4NL5TR Package PDFN-8-5X6X0.95-1.27 Marking 032R4NL5 S1 S2 S3 G4 8D 7D 6D 5D PDFN-8-5X6X0.95-1.27 Hazardous Substance Control Halogen...