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SVG034R3NL3C-2LF - 30V N-CHANNEL MOSFET

Download the SVG034R3NL3C-2LF datasheet PDF. This datasheet also covers the SVG034R3NL3C-2LFTR-SilanSemiconductors variant, as both devices belong to the same 30v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SVG034R3NL3C-2LF is N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

Key Features

  • 75A, 30V, RDS(on)(typ. )=3.6m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Extreme dv/dt rated.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant KEY.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVG034R3NL3C-2LFTR-SilanSemiconductors_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVG034R3NL3C-2LF
Manufacturer Silan Semiconductors
File Size 473.67 KB
Description 30V N-CHANNEL MOSFET
Datasheet download datasheet SVG034R3NL3C-2LF Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVG034R3NL3C-2LF_Datasheet 75A, 30V N-CHANNEL MOSFET DESCRIPTION SVG034R3NL3C-2LF is N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power management for UPS and Inverter Systems. FEATURES  75A, 30V, RDS(on)(typ.)=3.6m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.typ Ratings 30 1.2~2.2 4.