Silan SVD640F
SVD640T/D/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure middle/low-voltage VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.| Part No. | SVD640F |
|---|---|
| Datasheet | SVD640F Download |
| Manufacturer |  Silan |
| Description | 200V N-CHANNEL MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● 18A,200V,RDS(on)(typ.)=0.12Ω@VGS=10V● Low gate charge
● Low Crss
● Fast switching
● Improved dv/dt capability ORDERING INFORMATION Part No. SVD640T SVD640D SVD640DTR SVD640F Package TO-220-3L TO-252-2L TO-252-2L TO-220F-3L Marking SVD640T SVD640D SVD640D SVD640F Material Pb free Halogen free Halogen free Pb free Packing Tube Tube Tape & Reel Tube
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Pulsed Current TC=25°C TC=100°C Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS TJ Tstg SVD640T 150 1.2 Ratings SVD640D 200 ±20 18 11 72 110 0.88 635 150 -65～+150 SVD640F 35 0.28 Unit V V A A W W/°C MJ °C °C HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: // Rev.:1.1 Page 1 of 8 Silan Microelectronics SVD640T/D/F_Datasheet THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA SVD640T 0.83 62.5 Typ.
