Silan SVD640S
SVD640T/D/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.| Part No. | SVD640S |
|---|---|
| Datasheet | SVD640S Download |
| Manufacturer |  Silan |
| Description | 200V N-CHANNEL MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
2 1 3 1.Gate 2.Drain 3.Source TO-263-2LFEATURES
● 18A,200V,RDS(on)(typ.)=0.12@VGS=10V● Low gate charge
● Low Crss
● Fast switching
● Improved dv/dt capability 1 23 TO-220-3L 1 3 TO-252-2L ORDERING INFORMATION Part No. SVD640T SVD640D SVD640DTR SVD640S SVD640STR Package TO-220-3L TO-252-2L TO-252-2L TO-263-2L TO-263-2L Marking SVD640T SVD640D SVD640D SVD640S SVD640S Hazardous Substance Control Pb free Halogen free Halogen free Halogen free Halogen free Packing Type Tube Tube Tape&Reel Tube Tape&Reel HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: // Rev.:1.4 Page 1 of 9 Silan Microelectronics SVD640T/D/S_Datasheet
ABSOLUTE MAXIMUM RATINGS
(Tc=25C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Pulsed Current TC=25°C TC=100°C Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche L=30mH Energy (Note 1) L=10mH Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS...
