Silan SVT035R5ND
The SVT035R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems.| Part No. | SVT035R5ND |
|---|---|
| Datasheet | SVT035R5ND Download |
| Manufacturer |  Silan |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● 100A, 30V, RDS(on)(typ.)=4.0m@VGS=10V● Low gate charge
● Low Crss
● Fast switching
● Improved dv/dt capability NOMENCLATURE 2 1 1 3 23 1.Gate 2.Drain 3.Source TO-251J-3L 1 3 TO-252-2L 1 23 TO-220-3L S V TX X X R X N X Silan Low voltage trench MOS products Nominal voltage, using 2 digits; Example: 04 denotes 40V, 10 denotes 100V Package information. Example: T:TO-220; D:TO- 252; MJ:TO-251J; Channel polarity: N denotes N channel, P denotes P channel Resistance: R75 denotes 0.7mΩ；7R5 denotes 7.5mΩ; 100 denotes 10mΩ; 101 denotes 100mΩ ORDERING INFORMATION Part No. SVT035R5NDTR SVT035R5NMJ SVT035R5NT Package TO-252-2L TO-251J-3L TO-220-3L Marking 035R5ND 035R5NMJ 035R5NT Hazardous Substance Control Halogen free Halogen free Pb free Packing Tape&Reel Tape Tape HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: // Rev.:1.1 Page 1 of 9 Silan Microelectronics SVT035R5ND(MJ)(T)_Datasheet
ABSOLUTE MAXIMUM RATINGS
(Unless otherwise noted, TC=25C) Characteristics Symbol Drain-S...
