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SBT10K45WS - Small Signal Schottky Barrier Diodes

This page provides the datasheet information for the SBT10K45WS, a member of the SBT10K45WS_Silicon Small Signal Schottky Barrier Diodes family.

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Features

  • and Advantages: Low forward voltage drop(VF) Low reverse leakage current (IR) Very small conduction power loss Very small switching power loss Very high switching speed Very high reliability www. DataSheet4U. com Electrical Characteristics : (@TA=25°C unless otherwise specified) Characteristic Reverse Breakdown Voltage (Note 2) Forward Voltage (Note 2) Reverse Current (Note 2) Total Capacitance Symbol Min. Typ. Max. Unit V(BR)R VFM IRM CT 45 350 0.07 6.0 380 0.5 mV µA pF Test Conditions IR=100.

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Datasheet Details

Part number SBT10K45WS
Manufacturer Silicon-Based Technology
File Size 190.25 KB
Description Small Signal Schottky Barrier Diodes
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www.DataSheet4U.com Silicon-Based Technology Corp. Small-Signal Schottky Barrier Diodes SBT10K45WS Series SBT10K45WS series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies (SBT®) developed by Silicon-Based Technology Corporation, which exhibit high-performance characteristics for modern switching, conversion and protection applications with high speed and low power consumptions. The package types as described in this data sheet are set forth in routine production; other packages are available upon special orders. Features and Advantages: Low forward voltage drop(VF) Low reverse leakage current (IR) Very small conduction power loss Very small switching power loss Very high switching speed Very high reliability www.DataSheet4U.
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